Samsung Electronics and ASML Expand Strategic Collaboration for Next-Generation Semiconductor Manufacturing
Key takeaways
- Samsung and ASML are pushing the next wave of AI‑driven chip innovation by expanding High‑NA EUV collaboration and moving to 12‑inch photomasks, promising cost savings and higher productivity.
- High‑NA EUV to be introduced in DRAM by 2028
- Transition from 6‑inch to 12‑inch photomasks
- Samsung and ASML are long‑standing partners
What happened
Samsung Electronics and ASML announced an expansion of their long‑standing partnership to deepen collaboration on High‑NA EUV lithography and next‑generation 12‑inch photomask technology, with Samsung planning to introduce ASML’s High‑NA EUV into DRAM production by 2028.
Why it matters
The move will accelerate the shift to larger photomasks, boosting fab productivity, cutting chip‑making costs, and removing stitching constraints, which is critical as AI demands higher performance and efficiency from chips.
Short-term and longer-term
Short-term. In the next few weeks, watch for any updates on the 12‑inch mask development timeline and the first production runs of High‑NA EUV in DRAM.
Longer-term. Over the coming months, this partnership could strengthen Samsung’s competitive edge in advanced memory and foundry services, while ASML may capture a larger share of the high‑performance lithography market.